LOW THRESHOLD DC ELECTROLUMINESCENCE IN ZNSE - MN FILMS DEPOSITED ON N-GAAS SINGLE-CRYSTAL

被引：6

作者：

OHNISHI, H

HAMAKAWA, Y

机构：

[1] EHIME UNIV,FAC ENGN,DEPT ELECTR,MATSUYAMA,EHIME,JAPAN

[2] OSAKA UNIV,FAC ENGN SCI,DEPT ELECT ENGN,OSAKA,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 06期

关键词：

D O I：

10.1143/JJAP.16.981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：981 / 985

页数：5

共 13 条

[1]

AVEN M, 1967, PHYSICS CHEM II VI C, P738

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CHASE, EW ;

HEPPLEWH.RT ;

KRUPKA, DC ;

KAHNG, D .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) :2512-&

[3]

CHEN YS, 1972, J APPL PHYS, V43, P4089, DOI 10.1063/1.1660878

[4] CHARACTERISTICS OF PULSE EXCITED ELECTROLUMINESCENCE FROM ZNS FILMS CONTAINING RARE EARTH FLUORIDE [J].

CHEN, YS ;

DEPAOLIS, MV ;

KAHNG, D .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (02) :184-&

[5] SOME EFFECTS OF THE ELECTRIC CONTACT IN FILMS OF ELECTROLUMINESCENT ZNS-CU,CL [J].

HARPER, WJ .

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[6]

INOGUCHI T, 1971, SHARP TECH J, V10, P5

[7] ELECTROLUMINESCENCE OF RARE-EARTH AND TRANSITION METAL MOLECULES IN 2-6 COMPOUNDS VIA IMPACT EXCITATION [J].

KAHNG, D .

APPLIED PHYSICS LETTERS, 1968, 13 (06) :210-&

[8] VOLTAGE DEPENDENCE OF BRIGHTNESS IN RARE-EARTH DOPED ELECTROLUMINESCENT ZNS THIN-FILM DEVICES [J].

KOBAYASHI, H ;

TANAKA, S ;

SASAKURA, H ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (02) :264-270

[9] LIGHT-EMISSION BY INJECTED ELECTRONS IN ELECTROLUMINESCENT THIN-FILMS WITH INSULATING LAYER [J].

MATSUMOTO, H ;

ISHIMURA, T ;

YABUMOTO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (08) :1239-1240

[10]

NANBA S, 1963, OYO BUTURI, V32, P609

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