STRUCTURE AND PROPERTIES OF HIGH-EFFICIENCY ZNO CDZNS CUINGASE2 SOLAR-CELLS

被引：122

作者：

DEVANEY, WE ^{[1
]}

CHEN, WS ^{[1
]}

STEWART, JM ^{[1
]}

MICKELSEN, RA ^{[1
]}

机构：

[1] BOEING CO,TECH STAFF,SEATTLE,WA 98124

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 02期

关键词：

D O I：

10.1109/16.46378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin-film polycrystalline solar cells with the structure ZnO/CdZnS/CuInGaSe2 have been fabricated with total area efficiencies of up to 12.5 percent under AM1.5 equivalent illumination and 10.5 percent under AMO equivalent. These are among the highest total area efficiencies reported for polycrystalline thin-film solar cells. Current-voltage and quantum efficiency data for such a high efficiency cell are given. Described are the deposition of the CuInGaSe2 by physical vapor deposition in vacuum, the CdZnS by chemical deposition from solution, and the ZnO by reactive sputtering. The electrical and optical properties of the individual layers have been inferred from measurements on complete devices and on separate witness layers. Optical constants and thicknesses obtained from these measurements for the device layers are presented and the requirements for optimizing the device efficiency discussed. © 1990 IEEE

引用

页码：428 / 433

页数：6

共 11 条

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