INFLUENCE OF A MAGNETIC-FIELD ON HIGH-FREQUENCY RELAXATION-TIME IN N-TYPE POLAR SEMICONDUCTORS

被引：9

作者：

KATAYAMA, S ^{[1
]}

MILLS, DL ^{[1
]}

机构：

[1] UNIV CALIF IRVINE,DEPT PHYS,IRVINE,CA 92717

来源：

PHYSICAL REVIEW B | 1979年 / 19卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.19.6513

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We examine the influence of an intense magnetic field on high-frequency relaxation time observed in the infrared reflectivity of n-type polar semiconductors. The transport relaxation time due to electron-ionized single impurity scattering, as well as electron-LO phonon scattering is presented using the Kubo conductivity formula as the basis, with emphasis on both the effect of magnetic field and Coulomb interaction between carriers. It is argued that the observed structure of the high-frequency relaxation time on n-PbSe can be attributed mainly to the dependence of the LO phonon-mediated absorption process on the strength of magnetic field. © 1979 The American Physical Society.

引用

页码：6513 / 6524

页数：12

共 20 条

[1]

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[2]

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[3]

BURHARD H, 1978, PHYS REV, V18, P2935

[4]

Fetter AL., 1971, QUANTUM THEORY MANY