TRANSIT-TIME PHOTOCONDUCTIVITY IN HIGH-FIELD FET CHANNELS

被引：7

作者：

DARLING, RB

机构：

[1] GEORGIA INST TECHNOL,SCH ELECT ENGN,ATLANTA,GA 30332

[2] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 02期

关键词：

D O I：

10.1109/T-ED.1987.22940

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：433 / 444

页数：12

共 37 条

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LEVINE, BF .

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[5]

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[6] ULTRAHIGH SPEED MODULATION-DOPED HETEROSTRUCTURE FIELD-EFFECT PHOTODETECTORS [J].

CHEN, CY ;

CHO, AY ;

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GARBINSKI, PA ;

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APPLIED PHYSICS LETTERS, 1983, 42 (12) :1040-1042

[7]

DARLING RB, UNPUB IEEE J QUANTUM

[8]

DARLING RB, 1985, THESIS GEORGIA I TEC

[9]

DESALLES AA, 1981, APPL PHYS LETT, V38, P392

[10] OPTICAL CONTROL OF GAAS-MESFETS [J].

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