LASER PROBING OF THERMAL-BEHAVIOR OF ELECTRONIC COMPONENTS AND ITS APPLICATION IN QUALITY AND RELIABILITY TESTING

被引：36

作者：

CLAEYS, W

DILHAIRE, S

QUINTARD, V

机构：

[1] Laboratoire de Caractérisation Optique CPMOH, Université de Bordeaux I, CNRS

[2] Laboratoire de Microélectronique IXL, Université de Bordeaux I, CNRS 351 cours de la Libération

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 24卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)90093-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed two optical laser probes for the contactless characterisation of microelectronic components and ICs. The first is a high resolution interferometer for the measurement of dilatations, absolute values over 11 decades are obtained ranging from 10(-3) to 10(-14) m. The second is a reflectance probe for the absolute measurement of surface temperature variations upon ICs. The instrument is a thermometer for surface micrometric analysis able to measure temperature variation in the 10(-3) to 500-degrees-K range. The outstanding performances of these probes have been the starting point of the development of new investigation methods in the field of quality and reliability measurements. We show results of hot points detection upon integrated circuits with micrometric lateral resolution. We also present a method for homogeneity analysis of current density inside power MOS transistors. Finally we present a method for absolute temperature mapping upon metallic lines used in accelerated tests of current stress to study their reliability with regard to electromigration.

引用

页码：411 / 420

页数：10

共 7 条

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[2]

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[3]

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[4]

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[6]

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[7]

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