OBSERVATION OF OPTICAL BISTABILITY BY CHARGE-INDUCED SELF-FEEDBACK IN BIASED ALGAAS MULTIPLE QUANTUM-WELL STRUCTURES

A new type of optical bistable device is demonstrated. We report the first observation of optical bistable switching caused by charge-induced self-feedback due to field screening in GaAs/AlGaAs multiple quantum well structures, both at room temperature and at low temperature (110 K). A bias voltage supply is directly connected to the p-i-n diode with the multiple quantum well structure to attain optical bistability. Since no external series resistance is required, the device is attractive from the standpoint of a practical application. The mechanism for the self-feedback underlying the operation of the device is elaborated. The theoretical consideration about the resolvable spot size on the device operation is shown.