PREPARATION AND PROPERTIES OF BULK GAXINL-XAS CRYSTALS

The phase relations at the InAs/GaAs pseudo-binary and their implications regarding the growth of Ga In As crystals from the melt by gradient freezing and zone leveling are discussed. Homogeneous crystals have been grown for x > O.85 by gradient freezing. For compositions x ≤ 0.85 zone leveling is the only melt growth technique that results in macroscopically homogeneous crack-free crystals. However, compositional inhomogeneities on a microscopic scale are difficult to suppress in this range. The band gap of Gax In1-x As at 77K varies as Eg = 0.1+13+ 0.720×+0.3T5×2. © 1979 AIME.