1/F NOISE IN AMORPHOUS-SILICON AND HYDROGENATED AMORPHOUS-SILICON THIN-FILMS

被引：19

作者：

BACIOCCHI, M ^{[1
]}

DAMICO, A ^{[1
]}

VANVLIET, CM ^{[1
]}

机构：

[1] UNIV MONTREAL,CTR RECH MATH,MONTREAL H3C 3J7,QUEBEC,CANADA

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 12期

基金：

加拿大自然科学与工程研究理事会;

关键词：

1/f Noise - Amorphpous Silicon/Hydrogenated Amorphous Silicon Thin Films - Dangling Bonds - Hydrogen Partial Pressure Effects - Hydrogenated Bonds - Thermally-Activated Configuration Changes;

D O I：

10.1016/0038-1101(91)90042-W

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Excess noise measurements have been carried out on either sputtered a-Si or sputtered a-Si:H thin films, at 300 K and in the absence of light. The dependence of excess noise amplitude on hydrogen partial pressure in the sputtering chamber during the film growth has been studied. Investigations of 1/f noise in B-doped a-Si: H thin films have also been carried out. The results of this study show that 1/f noise can be correlated to both the hydrogen content in a-Si:H films and to the doping of the films. The noise is explained in terms of fluctuations in the number of gap states due to thermally activated configurational changes involving hydrogenated bonds and dangling bonds.

引用

页码：1439 / 1447

页数：9

共 18 条

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