GAS PERMEATION STUDY AND IMPERFECTION DETECTION OF THERMALLY GROWN AND DEPOSITED THIN SILICON DIOXIDE FILMS

被引：35

作者：

ING, SW

MORRISON, RE

SANDOR, JE

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1962年 / 109卷 / 03期

关键词：

D O I：

10.1149/1.2425375

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：221 / 226

页数：6

共 12 条

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