64KX1 BIT DYNAMIC ED-MOS RAM

被引：3

作者：

WADA, T

KUDOH, O

SAKAMOTO, M

YAMANAKA, H

NAKAMURA, K

KAMOSHIDA, M

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1978年 / 13卷 / 05期

关键词：

D O I：

10.1109/JSSC.1978.1051106

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：600 / 606

页数：7

共 9 条

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[3]

MATUKURA Y, 1968, Patent No. 789648

[4]

SCHROEDER PR, 1977, ISSCC DIG TECH PAPER

[5]

WADA T, 1977, J ELECTROCHEM SOC, V124, pC306

[6]

WADA T, 1977, 152ND EL SOC M ATL

[7] DOUBLE BORON IMPLANT SHORT-CHANNEL MOSFET [J].

WANG, PP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :196-204

[8]

YOSHIMURA H, 1978, ISSCC DIG TECH PAPER

[9] FABRICATION OF A MINIATURE 8K-BIT MEMORY CHIP USING ELECTRON-BEAM EXPOSURE [J].

YU, HN ;

DENNARD, RH ;

CHANG, THP ;

OSBURN, CM ;

DILONARDO, V ;

LUHN, HE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1297-1300

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