GENERATION-RECOMBINATION NOISE IN DOUBLE-INJECTION DIODES

被引：7

作者：

BILGER, HR

WORCH, PR

LEE, LL

NICOLET, MA

机构：

[1] Oklahoma State University, Stillwater

[2] California Institute of Technology, Pasadena

来源：

SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 11期

关键词：

D O I：

10.1016/0038-1101(69)90041-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A phenomenological approach is given which extends the g-r noise theory to a non-linear device. This approach is applied to a long double-injection diode in three modes of operation: Ohmic regime, semiconductor regime, and insulator regime. Analytic approximations for the carrier concentration and electric field profiles and computer solutions to a master differential equation are used for the evaluation of the noise. Experimental evidence is presented which supports the essential features of the derivation. © 1969.

引用

页码：849 / &

共 12 条

[1] EFFECTS OF DIFFUSION AND THERMAL GENERATION ON DOUBLE INJECTION IN SEMICONDUCTORS [J].