DETERMINATION OF ELECTRON-AFFINITY OF IN2O3 FROM ITS HETEROJUNCTION PHOTOVOLTAIC PROPERTIES

被引：4

作者：

SINGH, R ^{[1
]}

机构：

[1] MCMASTER UNIV,INST MAT RES,HAMILTON L8S 4M1,ONTARIO,CANADA

来源：

关键词：

D O I：

10.1149/1.2129178

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

页码：1081 / 1081

页数：1

共 11 条

[1] Bachmann K. J., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P524
[2] DUBOW J, UNPUBLISHED
[3] EFFICIENT PHOTOVOLTAIC HETEROJUNCTIONS OF INDIUM TIN OXIDES ON SILICON
DUBOW, JB
BURK, DE
SITES, JR
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (08) : 494 - 496
[4] Fahrenbruch A. L., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P281
[5] Feng T., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P519
[6] HETEROJUNCTION SOLAR-CELLS OF SNO 2/SI
FRANZ, S
KENT, G
ANDERSON, RL
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) : 107 - 123
[7] Kazmerski L. L., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P541
[8] EFFICIENT SPRAYED IN2O3-SN N-TYPE SILICON HETEROJUNCTION SOLAR-CELL
MANIFACIER, JC
SZEPESSY, L
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 459 - 462
[9] INDIUM-TIN-OXIDE-SILICON HETEROJUNCTION PHOTOVOLTAIC DEVICES
MIZRAH, T
ADLER, D
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 458 - 462
[10] IMPORTANCE OF ELECTRON-AFFINITY OF OXIDE-SEMI-CONDUCTORS AS USED IN SOLAR-CELLS
SINGH, R
SHEWCHUN, J
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 601 - 603