SELECTIVE HETEROEPITAXIAL GROWTH OF (100)-MGO (001)-Y1BA2CU3OY ON MGO SUBSTRATE AND ITS SUPERCONDUCTIVITY

The selective Y1Ba2Cu3Oy epitaxial growth and, as its advanced technology, MgO/Y1Ba2Cu3Oy selective heteroepitaxy are demonstrated. The film growth was done by the pressure-controlled magnetron sputtering on the MgO substrate with partial SiO coating. The epitaxial Y1Ba2Cu3Oy films were grown in the patterned shape through a SiO window, showing the critical temperature of 77 K. In the remaining wafer region where the film contacted the underlying SiO, significant Si and Ba interdiffusion was found, resulting in the amorphous and insulating Y-Ba-Cu-Si-O. In the same way, the selective heteroepitaxy was also successfully obtained. © 1990 The Japan Society of Applied Physics.