CHEMICAL AMPLIFICATION IN SUBMICRON LITHOGRAPHY - AN INFORMATION THEORETIC ANALYSIS

被引：10

作者：

SZMANDA, CR

TREFONAS, P

机构：

[1] Shipley Company, Newton

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90040-K

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A three dimensional model has been developed to simulate chemical amplification resists. This model does not assume that the exposure of the resist yields a continuous, smooth distribution of photoproducts. Rather, we consider explicitly a distribution consisting of discrete sites. Information theory is used to gain a quantitative understanding of the stochastic nature of the exposure and post exposure bake processes.

引用

页码：23 / 28

页数：6

共 8 条

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[5] Szmanda, O'Reilly, Trefonas, 1988 IEEE Workshop on Micrometer and Submicrometer Lithography, (1988)
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