ELEMENTAL ANALYSIS OF THIN-LAYERS BY ELASTIC HEAVY-ION SCATTERING

被引：5

作者：

GROTZSCHEL, R

HENTSCHEL, E

KLABES, R

KREISSIG, U

NEELMEIJER, C

ASSMANN, W

BEHRISCH, R

机构：

[1] UNIV MUNICH,BESCHLEUNIGERLAB,W-8046 GARCHING,GERMANY

[2] MAX PLANCK INST PLASMA PHYS,W-8046 GARCHING,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 63卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(92)95173-O

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Backscattering spectrometry of heavy ions with MeV energies offers a higher mass resolution compared to He-4 ions while the applicability of the Rutherford cross sections formula is maintained. This feature is used for the accurate composition analysis of compounds, especially of high T(c) superconducting films. Heavy incident ions, applied in combination with particle identifying recoil atom spectrometers are also useful for light element depth profiling. Here examples are given for the simultaneous analysis of Be. B, C, N, O, and F in thin films or surface layers.

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收藏

页码：77 / 82

页数：6

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