SPATIAL CONTROL OF QUANTUM-WELL INTERMIXING IN GAAS AIGAAS USING A ONE-STEP PROCESS

被引：22

作者：

AYLING, SG

BEAUVAIS, J

MARSH, JH

机构：

[1] Department of Electronics and Electrical Engineering, The University, Glasgow, G12 8QQ, Scotland

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 24期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; ANNEALING;

D O I：

10.1049/el:19921440

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dielectric cap disordering with strontium fluoride masking is used to provide a range of bandgap values in GaAs/AlGaAs quantum wells using a single annealing step. Partial area coverage by a strontium fluoride mask under a silica cap determines the amount of quantum well intermixing.

引用

页码：2240 / 2241

页数：2

共 3 条

[1] SUPPRESSION OF BANDGAP SHIFTS IN GAAS/ALGAAS QUANTUM-WELLS USING STRONTIUM FLUORIDE CAPS [J].