HARTREE ENERGY IN SEMICONDUCTOR QUANTUM-WELLS

被引：11

作者：

COMBESCOT, M ^{[1
]}

BETBEDERMATIBET, O ^{[1
]}

LAGUILLAUME, CB ^{[1
]}

BOUJDARIA, K ^{[1
]}

机构：

[1] UNIV PARIS 06,CNRS,URA 17,F-75251 PARIS 05,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 88卷 / 04期

关键词：

D O I：

10.1016/0038-1098(93)90515-O

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We calculate the Hartree energy of an electron gas in a doped semiconductor quantum well. We compare its exact value with its perturbative expansion. We show that for densities low enough to have one subband filled only, the exact calculation is unnecessary, the perturbative expansion with one or possibly two terms being already quite good.

引用

页码：309 / 315

页数：7