FABRICATION OF MULTIPLE-ELECTRODE CHIRPED-GRATING-TUNABLE DISTRIBUTED-FEEDBACK LASERS

被引：4

作者：

CHEN, N

NAKANO, Y

TADA, K

机构：

[1] Department of Electronic Engineering, University of Tokyo, Bunkyo-ku, Tokyo, 113

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1B期

关键词：

DISTRIBUTED-FEEDBACK SEMICONDUCTOR LASER; DFB LASER; TUNABLE LASER; CHIRPED GRATING; LINEAR CHIRPING; MULTIPLE ELECTRODES; WAVELENGTH TUNING; CONTINUOUS TUNING; GAALAS/GAAS;

D O I：

10.1143/JJAP.33.856

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper describes fabrication and characteristics of GaAlAs/GaAs wavelength tunable distributed-feedback (DFB) semiconductor lasers with linearly chirped grating. In a two-section device, a single-mode quasi-continuous tuning range of 2.2 nm at around 868 nm has been achieved. This resulted mainly from the chirped grating structure effect rather than-the free carrier plasma effect or the thermal tuning. A comparison of the two-section DFB laser with a conventional uniform grating has also been carried out.

引用

页码：856 / 858

页数：3

共 9 条

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