AREA DENSITY CONTROL OF QUANTUM-SIZE INGAAS/GA(A1)AS DOTS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：35

作者：

OSHINOWO, J

NISHIOKA, M

ISHIDA, S

ARAKAWA, Y

机构：

[1] Institute of Industrial Science, University of Tokyo, Minato-ku, Tokyo, 106

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 11B期

关键词：

QUANTUM DOTS; INGAS; MOCVD; STRANSKI-KRASTANOW GROWTH MODE; STRAINED NANOSTRUCTURES; SUBSTRATE OFF-ANGLE ORIENTATION;

D O I：

10.1143/JJAP.33.L1634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the accumulation of InGaAs dots (approximately 15 nm) on GaAs and AlGaAs surfaces, by metalorganic chemical vapor deposition (MOCVD). Scanning electron micrography (SEM) shows highly uniform dots formed by the Stranski-Krastanow growth mode. The average area InGaAs dot density can be controlled from 10(8) cm-2 up to more than 10(11) cm-2 by substrate off-angle orientation, deposition thickness, and growth temperature. The results indicate high area dot density for low surface diffusion.

引用

收藏

页码：L1634 / L1637

页数：4

相关论文

共 15 条

[1] NANOSCALE INP ISLANDS FOR QUANTUM BOX STRUCTURES BY HYDRIDE VAPOR-PHASE EPITAXY [J].

AHOPELTO, J ;

YAMAGUCHI, AA ;

NISHI, K ;

USUI, A ;

SAKAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (1A-B) :L32-L35

[2] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[3] INAS QUANTUM DOTS IN A SINGLE-CRYSTAL GAAS MATRIX [J].

BRANDT, O ;

TAPFER, L ;

PLOOG, K ;

BIERWOLF, R ;

HOHENSTEIN, M ;

PHILLIPP, F ;

LAGE, H ;

HEBERLE, A .

PHYSICAL REVIEW B, 1991, 44 (15) :8043-8053

[4] OPTICALLY DETECTED CARRIER CONFINEMENT TO ONE AND ZERO DIMENSION IN GAAS QUANTUM-WELL WIRES AND BOXES [J].

CIBERT, J ;

PETROFF, PM ;

DOLAN, GJ ;

PEARTON, SJ ;

GOSSARD, AC ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1986, 49 (19) :1275-1277

[5] DETERMINATION OF NONRADIATIVE SURFACE-LAYER THICKNESS IN QUANTUM DOTS ETCHED FROM SINGLE QUANTUM WELL GAAS/ALGAAS [J].

CLAUSEN, EM ;

CRAIGHEAD, HG ;

WORLOCK, JM ;

HARBISON, JP ;

SCHIAVONE, LM ;

FLOREZ, L ;

VANDERGAAG, B .

APPLIED PHYSICS LETTERS, 1989, 55 (14) :1427-1429

[6] ONSET OF INCOHERENCY AND DEFECT INTRODUCTION IN THE INITIAL-STAGES OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGHLY STRAINED INXGA1-XAS ON GAAS(100) [J].

GUHA, S ;

MADHUKAR, A ;

RAJKUMAR, KC .

APPLIED PHYSICS LETTERS, 1990, 57 (20) :2110-2112

[7] OPTICAL SPECTROSCOPY OF ULTRASMALL STRUCTURES ETCHED FROM QUANTUM-WELLS [J].

KASH, K ;

SCHERER, A ;

WORLOCK, JM ;

CRAIGHEAD, HG ;

TAMARGO, MC .

APPLIED PHYSICS LETTERS, 1986, 49 (16) :1043-1045

[8] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[9] SELF-ORGANIZED GROWTH OF REGULAR NANOMETER-SCALE INAS DOTS ON GAAS [J].

MOISON, JM ;

HOUZAY, F ;

BARTHE, F ;

LEPRINCE, L ;

ANDRE, E ;

VATEL, O .

APPLIED PHYSICS LETTERS, 1994, 64 (02) :196-198

[10] GROWTH-PROCESS AND MECHANISM OF NANOMETER-SCALE GAAS DOT-STRUCTURES USING MOCVD SELECTIVE GROWTH [J].

NAGAMUNE, Y ;

TSUKAMOTO, S ;

NISHIOKA, M ;

ARAKAWA, Y .

JOURNAL OF CRYSTAL GROWTH, 1993, 126 (04) :707-717