X-POINT EXCITONS IN AIAS/GAAS SUPERLATTICES

[1] SIMILARITY OF (GA, AL, AS) ALLOYS AND ULTRATHIN HETEROSTRUCTURES - ELECTRONIC-PROPERTIES FROM THE EMPIRICAL PSEUDOPOTENTIAL METHOD [J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3334 - 3344

[2] BILZ H, 1979, PHONON DISPERSION RE, P105

[3] A DENSE ELECTRON-HOLE-LIQUID IN GA0.08AL0.92AS [J]. SOLID STATE COMMUNICATIONS, 1981, 37 (12) : 987 - 991

[4] STAGGERED BAND ALIGNMENTS IN ALGAAS HETEROJUNCTIONS AND THE DETERMINATION OF VALENCE-BAND OFFSETS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (08) : 541 - 543

[5] DAWSON P, 1986, J VAC SCI TECHNOL B, V4, P1037

[6] FINKMAN E, UNPUB

[7] Glinskii G. F., 1981, Soviet Physics - Solid State, V23, P1883

[8] IHM J, UNPUB

[9] OPTICAL-PROPERTIES OF (AIAS)N(GAAS)N SUPERLATTICES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2691 - 2695

[10] RAMAN INVESTIGATION OF ANHARMONICITY AND DISORDER-INDUCED EFFECTS IN GA1-XALXAS EPITAXIAL LAYERS [J]. PHYSICAL REVIEW B, 1981, 24 (12): : 7194 - 7205

[1] SIMILARITY OF (GA, AL, AS) ALLOYS AND ULTRATHIN HETEROSTRUCTURES - ELECTRONIC-PROPERTIES FROM THE EMPIRICAL PSEUDOPOTENTIAL METHOD [J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3334 - 3344

[2] BILZ H, 1979, PHONON DISPERSION RE, P105

[3] A DENSE ELECTRON-HOLE-LIQUID IN GA0.08AL0.92AS [J]. SOLID STATE COMMUNICATIONS, 1981, 37 (12) : 987 - 991

[4] STAGGERED BAND ALIGNMENTS IN ALGAAS HETEROJUNCTIONS AND THE DETERMINATION OF VALENCE-BAND OFFSETS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (08) : 541 - 543

[5] DAWSON P, 1986, J VAC SCI TECHNOL B, V4, P1037

[6] FINKMAN E, UNPUB

[7] Glinskii G. F., 1981, Soviet Physics - Solid State, V23, P1883

[8] IHM J, UNPUB

[9] OPTICAL-PROPERTIES OF (AIAS)N(GAAS)N SUPERLATTICES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2691 - 2695

[10] RAMAN INVESTIGATION OF ANHARMONICITY AND DISORDER-INDUCED EFFECTS IN GA1-XALXAS EPITAXIAL LAYERS [J]. PHYSICAL REVIEW B, 1981, 24 (12): : 7194 - 7205