PHOTOELECTROCHEMICAL PROPERTIES OF ION-IMPLANTED HAFNIUM DIOXIDE FILMS

被引：17

作者：

NEWMARK, AR ^{[1
]}

STIMMING, U ^{[1
]}

机构：

[1] COLUMBIA UNIV,DEPT CHEM ENGN & APPL CHEM,ELECTROCHEM LAB,NEW YORK,NY 10027

来源：

ELECTROCHIMICA ACTA | 1989年 / 34卷 / 01期

关键词：

D O I：

10.1016/0013-4686(89)80008-8

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：47 / 55

页数：9

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