RESONANT RAMAN-SCATTERING BY EXCITONIC POLARITONS IN SEMICONDUCTORS

被引：17

作者：

NAKAMURA, A ^{[1
]}

WEISBUCH, C ^{[1
]}

机构：

[1] ECOLE POLYTECH,PHYS MAT CONDENSEE LAB,F-91128 PALAISEAU,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 32卷 / 04期

关键词：

D O I：

10.1016/0038-1098(79)90951-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report results on Resonant Raman Scattering (RRS) mediated by excitonic polaritons in a high-purity semiconductor (CdTe) at low temperatures. For the first time ingoing and outgoing resonances at the n = 1, 2, 3 exciton states are detected on the one and two LO-phonon RRS. The transformation at resonance of sharp Raman peaks into well-thermalized exciton luminescence bands is observed for every ingoing, outgoing or intermediate state resonance. © 1979.

引用

页码：301 / 304

页数：4

共 33 条

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