SCANNING IR MICROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF INHOMOGENEITIES IN LEC S-DOPED INP

被引：3

作者：

JIN, NY ^{[1
]}

BOOKER, GR ^{[1
]}

GRANT, IR ^{[1
]}

机构：

[1] MCP WAFER TECHNOL LTD,MILTON KEYNES MK15 8HJ,BUCKS,ENGLAND

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 20卷 / 1-2期

关键词：

D O I：

10.1016/0921-5107(93)90405-C

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Inhomogeneities in S-doped InP wafers from LEC-grown ingots were characterized by both scanning IR microscopy (SIRM) and transmission electron microscopy (TEM). The main inhomogeneities revealed were dislocations, both decorated with particles and non-decorated, interior and surface particles, and dopant striations. It was found that higher S doping gave a significantly lower dislocation density and more pronounced dislocation decoration. Post-grown annealing at 1000-degrees-C resulted in a higher dislocation density and the formation of small interior precipitate particles of high density. The SIRM and TEM observations correlated well with each other.

引用

页码：94 / 99

页数：6

共 5 条

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