SILICON-NITRIDE AND OXIDE FILM FORMATION BY THE SIMULTANEOUS USE OF A MICROWAVE ION-SOURCE AND AN ICB SYSTEM

被引：4

作者：

TAKAOKA, GH ^{[1
]}

MATSUGATANI, K ^{[1
]}

ISHIKAWA, J ^{[1
]}

TAKAGI, T ^{[1
]}

机构：

[1] KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷

关键词：

D O I：

10.1016/0168-583X(89)90298-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：783 / 786

页数：4

共 11 条

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[10] LOW-TEMPERATURE GROWTH OF ALN AND AL2O3 FILMS BY THE SIMULTANEOUS USE OF A MICROWAVE ION-SOURCE AND AN IONIZED CLUSTER BEAM SYSTEM [J].

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