THIN-FILM DC ELECTROLUMINESCENT DEVICES OF AN IN2O3-ZNS - MN-ZNSE-AL STRUCTURE

被引：9

作者：

OKAMOTO, K

TANAKA, S

KOBAYASHI, H

SASAKURA, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 09期

关键词：

D O I：

10.1109/T-ED.1978.19244

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1170 / 1171

页数：2

共 9 条

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[2]

HANAK JJ, 1974, JPN J APPL PHYS, P809

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[4]

INOGUCHI T, 1974, SID INT S, P84

[5] ELECTROLUMINESCENCE OF RARE-EARTH AND TRANSITION METAL MOLECULES IN 2-6 COMPOUNDS VIA IMPACT EXCITATION [J].

KAHNG, D .

APPLIED PHYSICS LETTERS, 1968, 13 (06) :210-&

[6] VOLTAGE DEPENDENCE OF BRIGHTNESS IN RARE-EARTH DOPED ELECTROLUMINESCENT ZNS THIN-FILM DEVICES [J].

KOBAYASHI, H ;

TANAKA, S ;

SASAKURA, H ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (02) :264-270

[7]

MITO S, 1974, SID, P86

[8] DC ELECTROLUMINESCENCE AND RELATED PROPERTIES IN EVAPORATED THIN FILMS OF ZNS(CU, MN, CL) [J].

MIYATA, TO ;

NAKAGAWA, S ;

HIRAYAMA, H ;

HASEGAWA, H ;

KORENAGA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (06) :615-&

[9] DC ELECTROLUMINESCENCE IN ZINC SULFIDE FILMS [J].

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JOURNAL OF APPLIED PHYSICS, 1962, 33 (10) :3045-&

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