ELECTRICAL RESISTIVITIES OF HIGH-QUALITY QUASI-CRYSTALS AT LOW-TEMPERATURES

To obtain reliable data for electrical properties of quasicrystals, trials have been made to produce high-quality, least second phases and fewer defects, icosahedral phases (I-phase) for AlLiCu alloy without a magnetic moment and AlSiRuMn alloys with a moment, respectively. The etching method which dissolves only the fcc Al and T1 second phase completely from the AlLiCu I-phase was developed. For AlLiCu I-phase, the density of states at the Fermi energy obtained from the electronic specific heat and product of the mean free path and the Fermi velocity obtained from the resistivity are extremely small compared with the free electron value. Temperature and magnetic field dependence of the resistivity indicate the weak localization of electrons. An addition of ruthenium to AlSiMn alloy system causes sharpening of the X-ray diffraction peaks. The resistivity and temperature dependence of it in the AlSiRuMn I-phases have good correlation with the amount of magnetic moment and do not have apparent correlation with the width of X-ray diffraction peaks, i.e. the defect density. © 1990.