REFLECTOMETRIC STUDY OF DANGLING-BOND SURFACE-STATES AND OXYGEN-ADSORPTION ON THE CLEAN SI(111)7X7 SURFACE

被引：44

作者：

WIERENGA, PE

VANSILFHOUT, A

SPARNAAY, MJ

机构：

[1] Twente University of Technology, Department of Applied Physics, Enschede

来源：

SURFACE SCIENCE | 1979年 / 87卷 / 01期

关键词：

D O I：

10.1016/0039-6028(79)90168-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

External differential reflection measurements were carried out on clean Si (111)7 × 7 surfaces in the photon-energy range of 1.0-3.0 eV at 300 and 80 K. The results at 300 K showed a main peak in the joint density-of-states curve for optical transitions from the filled dangling-bond surface-states band to empty bulk-conduction band levels at 2.9 ± 0.1 eV and a shoulder at the low-energy side. At 80 K the shoulder sharpened to a real second peak at 1.76 ± 0.04 eV. Oxygen adsorption in the submonolayer region appeared to take place preferentially on the surface atoms which were responsible for the second peak. © 1979.

引用

页码：43 / 52

页数：10

共 22 条

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