ELECTRICAL DAMAGE IN NORMAL-GAAS DUE TO METHANE HYDROGEN RIE

被引:22
作者
COLLOT, P
GAONACH, C
机构
[1] Thomson CSF, Laboratoire Central de Recherches, 91401 Orsay Cedex
关键词
D O I
10.1088/0268-1242/5/3/009
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In order to investigate the electrical damage induced in Si-doped GaAs by CH4/H2 RIE, electrical characterisations (I-V, C-V) of Schottky diodes fabricated on the dry-etched surface were performed. After RIE carried out at 1.3 W cm-2, the Schottky barrier height decreases from 0.79 V to 0.53 V. Successive wet chemical etchings of the dry-etched surface show that the in-depth extent of this damage is at least 50 nm. Doping profiles, derived from conventional C-V analysis show a decrease in free-carrier concentration in the surface after RIE. The extent of this passivation is inversely dependent on the initial doping level. This effect is attributed to a chemical neutralisation of the doping centres by atomic hydrogen. The reactivation energy for recovery of the donor activity is around 1.75 eV.
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页码:237 / 241
页数:5
相关论文
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