ELECTRICAL DAMAGE IN NORMAL-GAAS DUE TO METHANE HYDROGEN RIE

被引：22

作者：

COLLOT, P

GAONACH, C

机构：

[1] Thomson CSF, Laboratoire Central de Recherches, 91401 Orsay Cedex

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 03期

关键词：

D O I：

10.1088/0268-1242/5/3/009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to investigate the electrical damage induced in Si-doped GaAs by CH4/H2 RIE, electrical characterisations (I-V, C-V) of Schottky diodes fabricated on the dry-etched surface were performed. After RIE carried out at 1.3 W cm-2, the Schottky barrier height decreases from 0.79 V to 0.53 V. Successive wet chemical etchings of the dry-etched surface show that the in-depth extent of this damage is at least 50 nm. Doping profiles, derived from conventional C-V analysis show a decrease in free-carrier concentration in the surface after RIE. The extent of this passivation is inversely dependent on the initial doping level. This effect is attributed to a chemical neutralisation of the doping centres by atomic hydrogen. The reactivation energy for recovery of the donor activity is around 1.75 eV.

引用

页码：237 / 241

页数：5

共 17 条

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