共 17 条
- [1] Gagne C, Solid State Technol., 31, May, (1988)
- [2] Seabaugh A, Selective reactive ion etching of GaAs on AlGaAs using CCl2F2 and He, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 6, 1, (1988)
- [3] Salimian S, Cooper CB, Norton R, Bacon J, Appl. Phys. Lett., 51, 14, (1987)
- [4] Scherer A, Craighead HG, Beebe ED, Gallium arsenide and aluminum gallium arsenide reactive ion etching in boron trichloride/argon mixtures, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 5, 6, (1987)
- [5] Niggerbrugge U, Klug M, Garus G, (1985)
- [6] Cheung R, Thoms S, Beaumont SP, Doughty G, Law V, Wilkinson CD, Electron. Lett., 23, 16, (1987)
- [7] Henry L, Vaudry C, Electron. Lett., 23, 24, (1987)
- [8] Chevallier J, Dautremont-Smith WC, Tu CW, Pearton SJ, Appl. Phys. Lett., 47, 2, (1985)
- [9] Yamane Y, Yamasaki K, Mizutani T, Annealing Behavior of Damage Introduced in GaAs by Reactive Ion Beam Etching, Japanese Journal of Applied Physics, 21, (1982)
- [10] Shin SM, Chung HK, Chen CH, Tan K, J. Appl. Phys., 62, 5, (1987)