PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY STUDIES ON ZNXCD1-XS THIN-FILMS

被引：48

作者：

GORDILLO, G

机构：

[1] Departamento de Física, Universidad Nacional, Bogotá

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1992年 / 25卷 / 1-2期

关键词：

D O I：

10.1016/0927-0248(92)90015-H

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Photoluminescence and photoconductivity measurements on ZnxCd1-xS thin films were carried out in order to obtain information about localized electronic states formed in the forbidden gap. Shallow donor states as caused by sulfur vacancies and deep acceptor states as caused by Cd and Zn vacancies and Cu impurities were detected. The presence of deep states in the (Zn,Cd)S layers leads to a high photosensitivity in the IR region at room temperature. This material is very attractive for the fabrication of thin film based IR detectors.

引用

页码：41 / 49

页数：9

共 12 条

[1]

DEVANEY WE, 1990, IEEE T ELECTRON DEV, V17, P61

[2]

DIMMLER B, 1987, ISES SOLAR WORLD C

[3]

GORDILLO G, 1985, SOL CELLS, V14, P219, DOI 10.1016/0379-6787(85)90058-4

[4]

GORDILLO G, 1984, 5TH INT SOL FOR BERL, P760

[5]

HALL RB, 1980, 14TH IEEE PHOT SPEC, P707

[6]

HALSTED RE, 1967, PHYSICS CHEM 2 6 COM

[7] OPTICALLY DETECTED MAGNETIC-RESONANCE OF THE ZINC VACANCY IN ZNSE [J].

LEE, KM ;

DANG, LS ;

WATKINS, GD .

SOLID STATE COMMUNICATIONS, 1980, 35 (07) :527-530

[8]

MENNER R, 1991, IN PRESS 10TH EC PHO

[9]

MITCHELL K, 1988, 20TH P IEEE PHOT SPE

[10] STUDY OF ELECTRICAL-PROPERTIES IN ZNXCD1-XS THIN-FILMS [J].

RODRIGUEZ, JA ;

GORDILLO, G .

SOLAR ENERGY MATERIALS, 1989, 19 (06) :421-431

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