CURRENT GAIN IN PHOTODIODE STRUCTURES

被引：16

作者：

DAVIS, AP

ELLIOTT, CT

WHITE, AM

机构：

[1] Defence Research Agency, Electronics Division, RSRE, Malvern, Worcs WR14 3PS England, St Andrews Road

来源：

INFRARED PHYSICS | 1991年 / 31卷 / 06期

关键词：

D O I：

10.1016/0020-0891(91)90145-6

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We show that the electric field which is responsible for the removal of excess majority carriers created when a photodiode is illuminated induces an additional minority carrier current flow to the diode junction. This effect is particularly marked when the bulk semiconductor has mixed conductivity and when the minority to majority carrier mobility ratio is high, and can be the cause of anomalously low junction resistance in photodiodes.

引用

页码：575 / 577

页数：3