Comparison of the properties of BN films synthesized by inductively coupled rf and microwave plasmas

被引：14

作者：

Kiel, F ^{[1
]}

Cotarelo, M ^{[1
]}

Delplancke, MP ^{[1
]}

Winand, R ^{[1
]}

机构：

[1] FREE UNIV BRUSSELS,FAC SCI APPL,DEPT MET & ELECTROCHEM,B-1050 BRUSSELS,BELGIUM

来源：

THIN SOLID FILMS | 1995年 / 270卷 / 1-2期

关键词：

boron nitride; plasma processing and deposition; adhesion; optical spectroscopy;

D O I：

10.1016/0040-6090(95)06909-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of boron nitride are synthesized by two plasma-enhanced chemical vapour deposition techniques: inductively coupled r.f. plasma (13.56 MHz) and microwave plasma (2.45 GHz). We study the composition (impurity level, B/N ratio), the proportion of c-BN phase in the films and other properties of those films as a function of various process parameters. Two boron and two nitrogen precursors are compared: trimethyl borazine and diborane, dinitrogen and ammonia, respectively. The advantages and disadvantages of each combinations are presented. The deposition process is followed by optical emission spectroscopy. Adhesion is one of the main problems encountered for films containing c-BN.

引用

页码：118 / 123

页数：6

共 12 条

[1] A SIMPLE-MODEL FOR THE FORMATION OF COMPRESSIVE STRESS IN THIN-FILMS BY ION-BOMBARDMENT [J].

DAVIS, CA .

THIN SOLID FILMS, 1993, 226 (01) :30-34

[2]

DAVIS RF, 1994, 41ST P AVS NAT S DEN

[3]

DWORSCHAK W, IN PRESS THIN SOLID

[4] PREPARATION OF CUBIC BORON-NITRIDE FILMS BY LOW-PRESSURE INDUCTIVELY-COUPLED PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION [J].

ICHIKI, T ;

YOSHIDA, T .

APPLIED PHYSICS LETTERS, 1994, 64 (07) :851-853

[5] EFFECTS OF THE SUBSTRATE BIAS ON THE FORMATION OF CUBIC BORON-NITRIDE BY INDUCTIVELY-COUPLED PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION [J].

ICHIKI, T ;

MOMOSE, T ;

YOSHIDA, T .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) :1330-1334

[6]

ICHIKI T, 1991, P JPN S PLASM CHEM, V4, P227

[7]

KRETSCHMER KH, 1990, SOLID STATE TECHNOL, V33, P53

[8]

KUHR M, IN PRESS SURF COAT T

[9] PROPERTIES OF TETRAHEDRAL AMORPHOUS-CARBON PREPARED BY VACUUM-ARC DEPOSITION [J].

MCKENZIE, DR ;

MULLER, D ;

PAILTHORPE, BA ;

WANG, ZH ;

KRAVTCHINSKAIA, E ;

SEGAL, D ;

LUKINS, PB ;

SWIFT, PD ;

MARTIN, PJ ;

AMARATUNGA, G ;

GASKELL, PH ;

SAEED, A .

[10]

REINKE S, 1994, SEP P DIAM 94 C CIOC

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