CRITICAL PRESSURE FOR METAL-SEMICONDUCTOR TRANSITION IN V2O3

被引：109

作者：

MCWHAN, DB

RICE, TM

机构：

[1] Bell Telephone Laboratories, Murray Hill, NJ

来源：

PHYSICAL REVIEW LETTERS | 1969年 / 22卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.22.887

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The metal-semiconductor transition in V2O3 is found to be suppressed above 26 kbar which corresponds to a volume compression of 0.9%. The temperature and volume dependence of the resistivity of the metallic phase is consistent with semimetallic behavior and a pressure-dependent band overlap. We propose that the metal-semiconductor transition in V2O3 may be driven by the Coulomb attraction between electrons and holes and may be an example of an excitonic phase change. © 1969 The American Physical Society.

引用

页码：887 / +

页数：1

共 23 条

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