PHOTOEMISSION-STUDY OF THE INTERACTION OF A1 WITH A GAAS (110) SURFACE

被引：61

作者：

SKEATH, P

LINDAU, I

PIANETTA, P

CHYE, PW

SU, CY

SPICER, WE

机构：

[1] Stanford Electronics Laboratories, Stanford University, Stanford

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1979年 / 17卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0368-2048(79)80016-X

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

A room-temperature reaction between Al adsorbate atoms and a GaAs (110) surface is observed by means of soft X-ray photoemission techniques. Evidence of two states of Al which are distinct from the bulk Al metal is seen at submonolayer coverages. The sequential appearance of these states suggest that both Al chemisorbed on the surface and Al replacing Ga in the surface lattice are present. The possible influence of surface lattice reconstruction and Al proximity effects on the replacement reaction is discussed. The replacement reaction is important in the context of metal contacts to GaAs (both ohmic and Schottky barriers) as well as for GaAs-AlGaAs heterojunctions. © 1979.

引用

页码：259 / 265

页数：7

共 28 条

[1]

Andrews J. M., 1975, Critical Reviews in Solid State Sciences, V5, P405, DOI 10.1080/10408437508243502

[2] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].