ELECTRICAL-PROPERTIES OF JUNCTIONS BETWEEN GE FILMS AND MONO-CRYSTALLINE SILICON

被引：5

作者：

TOVE, PA

ALI, MP

IBRAHIM, MM

NORDE, H

机构：

[1] Electronics Department, Institute of Technology, University of Uppsala

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 51卷 / 02期

关键词：

D O I：

10.1002/pssa.2210510222

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Junctions were fabricated by rf sputter deposition of germanium films onto chemically etched p‐and n‐type silicon crystals. The electrical properties are studied by I–U and C–U measurements. Heat‐treated (400 °C) junctions show particularly reproducible properties and for these the barrier height to p‐Si is 0.8 eV while that to n‐Si is 0.3 eV. This offers technological applications by giving blocking contacts to p‐Si and ohmic to n‐Si. Unannealed junctions show somewhat higher hole barrier and also higher electron barrier, revealing the existence of radiation damage after the sputter deposition. At low frequencies the C–U measurements show excess capacitance, compared with what is expected for an abrupt junction. This indicates the contribution of states in the Ge film and at the interface. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：491 / 496

页数：6

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