EFFECTS OF A BUFFER LAYER ON FREE-CARRIER DEPLETION IN N-TYPE GAAS

被引:5
作者
LOOK, DC [1 ]
EVANS, KR [1 ]
STUTZ, CE [1 ]
机构
[1] USAF,WRIGHT LAB,ELECTR TECHNOL DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433
关键词
D O I
10.1109/16.81617
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Poisson's equation is solved in the depletion approximation to give an expression for the sheet free-carrier charge transferred from a conductive semiconductor layer to acceptor (or donor) states at interfaces or in the bulk material. The principal goal of the paper is to show that a relatively thin, undoped buffer layer between the substrate and active layer can dramatically lower the free-carrier loss to substrate interface states. Data on molecular-beam epitaxial, n-type GaAs agree well with the theory, but show that there still is some loss at the interface between the active layer and buffer layer.
引用
收藏
页码:1280 / 1284
页数:5
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