LUMINESCENCE AND PHOTOMODULATED TRANSMISSION MEASUREMENTS IN INGAAS/GAAS MODULATION-DOPED SINGLE QUANTUM-WELLS

被引:7
作者
IIKAWA, F
BERNUSSI, AA
SOARES, AG
PLENTZ, FO
MOTISUKE, P
SACILOTTI, MA
机构
[1] CPQD TELEBRAS,BR-13088061 CAMPINAS,SP,BRAZIL
[2] UNIV LION I,LPCM,F-69622 VILLEURBANNE,FRANCE
关键词
D O I
10.1063/1.356155
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photoluminescence and photomodulated transmission measurements on In0.2Ga0.8As/GaAs/Al0.3Ga0.7As modulation doped pseudomorphic single quantum wells are presented. Photomodulated transmission spectra at low temperatures showed sharp lines that are separated with respect to the luminescence peaks due to the Stokes shift. From the Stokes shift we estimated the Fermi energy and the two-dimensional electron gas density. The obtained results are in good agreement with Shubnikov-de-Haas data. The temperature dependence of the optical spectra was also investigated. The photomodulated transmission technique is shown to be a good tool to evaluate the electronic properties of modulation doped single quantum well structures, including an estimation of the Fermi energy and the two-dimensional electron gas density.
引用
收藏
页码:3071 / 3074
页数:4
相关论文
共 18 条
[1]  
CARDONA M, 1969, SOLID STATE PHYSIC S
[2]   ELECTRONIC STATES AND OPTICAL-TRANSITIONS IN MODULATION-DOPED N-TYPE GAXIN1-XAS ALXIN1-XAS MULTIPLE QUANTUM WELLS [J].
CINGOLANI, R ;
STOLZ, W ;
PLOOG, K .
PHYSICAL REVIEW B, 1989, 40 (05) :2950-2955
[3]   MANY-BODY EFFECTS IN A MODULATION-DOPED SEMICONDUCTOR QUANTUM-WELL [J].
DELALANDE, C ;
BASTARD, G ;
ORGONASI, J ;
BRUM, JA ;
LIU, HW ;
VOOS, M ;
WEIMANN, G ;
SCHLAPP, W .
PHYSICAL REVIEW LETTERS, 1987, 59 (23) :2690-2692
[4]   PHOTOLUMINESCENCE AND ELECTROREFLECTANCE STUDIES OF MODULATION-DOPED PSEUDOMORPHIC ALGAAS/INGAAS/GAAS QUANTUM-WELLS [J].
DODABALAPUR, A ;
KESAN, VP ;
NEIKIRK, DP ;
STREETMAN, BG ;
HERMAN, MH ;
WARD, ID .
JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (03) :265-270
[5]  
GOSSARD AC, 1985, SYNTHETIC MODULATED, P215
[6]   TEMPERATURE-DEPENDENCE OF THE PHOTOREFLECTANCE OF A STRAINED LAYER (001) IN0.21GA0.79AS/GAAS SINGLE QUANTUM-WELL [J].
HUANG, YS ;
QIANG, H ;
POLLAK, FH ;
PETTIT, GD ;
KIRCHNER, PD ;
WOODALL, JM ;
STRAGIER, H ;
SORENSEN, LB .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (12) :7537-7542
[7]   OPTICAL STUDIES IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J].
IIKAWA, F ;
CERDEIRA, F ;
VAZQUEZLOPEZ, C ;
MOTISUKE, P ;
SACILOTTI, MA ;
ROTH, AP ;
MASUT, RA .
PHYSICAL REVIEW B, 1988, 38 (12) :8473-8476
[8]   FREE CARRIER AND MANY-BODY EFFECTS IN ABSORPTION-SPECTRA OF MODULATION-DOPED QUANTUM WELLS [J].
LIVESCU, G ;
MILLER, DAB ;
CHEMLA, DS ;
RAMASWAMY, M ;
CHANG, TY ;
SAUER, N ;
GOSSARD, AC ;
ENGLISH, JH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) :1677-1689
[9]  
MARQUEZ GE, 1992, 21ST P INT C PHYS SE
[10]   SPECTROSCOPY OF A HIGH-MOBILITY GAAS-GA1-XALXAS ONE-SIDE-MODULATION-DOPED QUANTUM-WELL [J].
MEYNADIER, MH ;
ORGONASI, J ;
DELALANDE, C ;
BRUM, JA ;
BASTARD, G ;
VOOS, M ;
WEIMANN, G ;
SCHLAPP, W .
PHYSICAL REVIEW B, 1986, 34 (04) :2482-2485