ELECTRICAL-PROPERTIES OF INSB IRRADIATED WITH FAST-NEUTRONS

被引：5

作者：

BARAMIDZE, NV ^{[1
]}

BONCH-BRUEVICH, VL ^{[1
]}

GIORGADZE, MP ^{[1
]}

KURDIANI, NI ^{[1
]}

机构：

[1] MV LOMONOSOV STATE UNIV, MOSCOW 117234, USSR

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1982年 / 110卷 / 01期

关键词：

D O I：

10.1002/pssb.2221100103

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：33 / 37

页数：5

共 10 条

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[3] INTERBAND OPTICAL TRANSITIONS IN DISORDERED SEMICONDUCTORS [J].

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[4]

BONCHBROEVICH VL, VESTNIK MOSKOVSK U

[5]

Dzhandieri M. Sh., 1971, Fizika i Tekhnika Poluprovodnikov, V5, P1445

[6] STAGE-2 RECOVERY IN ELECTRON-IRRADIATED INSB [J].

EISEN, FH .

PHYSICAL REVIEW, 1966, 148 (02) :828-&

[7]

KONOPLOVA PF, 1972, RAD DEFECTS SEMICOND

[8]

KURDIANI NI, 1967, FIZ TEKH POLUPROV, V1, P646

[9]

VITOVSKII NA, 1979, FIZ TEKH POLUPROV, V13, P1958

[10] INTRABAND CONDUCTIVITY AND THERMOPOWER OF SEMICONDUCTORS WITH SLOWLY VARYING GAUSSIAN RANDOM FIELD [J].

ZHUMATII, PG .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 75 (01) :61-72

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