GENERATION-RECOMBINATION NOISE AT 77-DEGREES-K IN SILICON BARS AND JFETS

The theory of generation-recombination noise in silicon bars and in JFETs is extended to the case in which the devices operate in the hot electron regime. It is shown that Nougier et al.'s measurements at 77°K can at least be partly explained as generation recombination noise; as a matter of fact, the theory can provide an almost perfect match for field strengths between 1000 and 3000 V/cm for g-r noise alone. We believe, however, that some hot electron noise with a similar field dependence as g-r noise is present. One can now understand why Kim, van der Ziel and Rucker found an activation energy of only 63 mV for the noise in silicon JFETs around 77°K. © 1979.