EFFECT OF OXYGEN AGGREGATION PROCESSES ON THE RECOMBINING ACTIVITY OF 60-DEGREES DISLOCATIONS IN CZOCHRALSKI-GROWN SILICON

被引:26
作者
ACERBONI, S [1 ]
PIZZINI, S [1 ]
BINETTI, S [1 ]
ACCIARRI, M [1 ]
PICHAUD, B [1 ]
机构
[1] UNIV AIX MARSEILLE,CNRS,MATOP LAB,F-13397 MARSEILLE 13,FRANCE
关键词
D O I
10.1063/1.357573
中图分类号
O59 [应用物理学];
学科分类号
摘要
The interaction of dislocations with light elements like oxygen and carbon presents a variety of aspects which are of basic interest for the understanding of gettering processes, as well as for a deeper knowledge of the electrical and optical properties of dislocations. We report the results of a systematic investigation of the influence of the dislocations on the segregation of oxygen and of the effect of oxygen segregation on their electrical activities. The experiments were carried out on p-type Czochralski silicon, in the 700-1100-degrees-C temperature range. It has been shown that not only a direct oxygen-dislocation interaction occurs, but also that a competition between homogeneous and heterogeneous segregation processes occurs, which influences the overall electrical properties of the samples as well.
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页码:2703 / 2710
页数:8
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