AN IMPROVED CALIBRATION TECHNIQUE FOR ON-WAFER LARGE-SIGNAL TRANSISTOR CHARACTERIZATION

被引:62
作者
FERRERO, A
PISANI, U
机构
[1] Dipartimento di Elettronica, Politecnico di Torino, 10129, Tocino
关键词
D O I
10.1109/19.278582
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The on-wafer measurement of complex quantities and absolute power levels of active devices are truly significant for nonlinear device characterization and modeling. In this paper, an original procedure, which allows one to perform both the vector and the power calibrations at the RF wafer probe tips used for on-wafer measurement of two port devices, is presented. The measurement system is based on an automatic vector network analyzer with coaxial directional couplers and RF co-planar wafer probes. A new error model of the dual directional coupler, which samples the power waves traveling at device output, allows one to take advantage of the coaxial section at the output of the measuring system for calibrating the power level up to the on-wafer probe tips.
引用
收藏
页码:360 / 364
页数:5
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