Ni related centers in synthetic diamond

被引：7

作者：

Hofmann, DM

Christmann, P

Volm, D

Pressel, K

Pereira, L

Santos, L

Pereira, E

机构：

[1] INST HALBLEITERPHYS,D-15230 FRANKFURT,GERMANY

[2] UNIV AVEIRO,DEPT FIS,P-3800 AVEIRO,PORTUGAL

来源：

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷

关键词：

diamond; transition metals; Nickel;

D O I：

10.4028/www.scientific.net/MSF.196-201.79

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ni related centers in synthetic diamond have been studied by optical and spin resonance methods. The 0/- recharging level of substitutional Ni (Ni-s) was found to be 2.47 eV below the conduction band. Spin dependent transfer processes are active to observe the Ni-s(-) spin resonance signal on the dominant 2.56 eV emission. A study of the Ni related 1.4 eV system by temperature dependent luminescence and absorption shows at low temperatures (< 25 K) an uncommon behaviour which is explained by reabsorption processes.

引用

页码：79 / 83

页数：5

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