METHODOLOGY FOR BIPOLAR PROCESS DIAGNOSIS AND ITS APPLICATION TO ADVANCED SELF-ALIGNED BIPOLAR-TRANSISTORS

被引：9

作者：

LI, GP

HACKBARTH, E

CHUANG, CT

TANG, DDL

CHEN, TC

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 08期

关键词：

D O I：

10.1109/T-ED.1987.23145

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1736 / 1740

页数：5

共 13 条

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[2]

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[3]

LI GP, IN PRESS IDENTIFICAT

[4]

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[5] SELF-ALIGNED BIPOLAR-TRANSISTORS FOR HIGH-PERFORMANCE AND LOW-POWER-DELAY VLSI [J].

NING, TH ;

ISAAC, RD ;

SOLOMON, PM ;

TANG, DDL ;

YU, HN ;

FETH, GC ;

WIEDMANN, SK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) :1010-1013

[6] EFFECT OF EMITTER CONTACT ON CURRENT GAIN OF SILICON BIPOLAR-DEVICES [J].

NING, TH ;

ISAAC, RD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) :2051-2055

[7] NEW POLYSILICON PROCESS FOR A BIPOLAR DEVICE - PSA TECHNOLOGY [J].

OKADA, K ;

AOMURA, K ;

NAKAMURA, T ;

SHIBA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :385-389

[8]

Sakai T., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P18

[9]

SOLOMON PM, 1979, ISSCC, P86

[10]

SZE SM, 1981, PHYSICS SEMICONDUCTO

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