TUNNELING INJECTION INTO MODULATION DOPING STRUCTURES - A MECHANISM FOR NEGATIVE DIFFERENTIAL RESISTANCE 3-TERMINAL HIGH-SPEED DEVICES

被引：5

作者：

LEBURTON, JP ^{[1
]}

KOLODZEY, J ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 09期

关键词：

D O I：

10.1109/16.2587

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1530 / 1532

页数：3

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[7] NOVEL REAL-SPACE HOT-ELECTRON TRANSFER DEVICES [J].

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