STRUCTURE ANALYSIS OF THERMAL OXIDE FILMS OF SILICON BY ELECTRON DIFFRACTION AND INFRARED ABSORPTION

被引：43

作者：

NAGASIMA, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1970年 / 9卷 / 08期

关键词：

D O I：

10.1143/JJAP.9.879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：879 / &

共 31 条

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