DYNAMICS AND STRUCTURAL ASSESSMENT OF OPEN SEMICONDUCTOR SURFACES - GAAS(110)

被引：37

作者：

SANTINI, P

MIGLIO, L

BENEDEK, G

HARTEN, U

RUGGERONE, P

TOENNIES, JP

机构：

[1] UNIV MILAN,DIPARTMENTO FIS,I-20133 MILAN,ITALY

[2] MAX PLANCK INST STROMUNGSFORSCH,W-3400 GOTTINGEN,GERMANY

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.42.11942

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a bond-charge-model slab calculation for the surface dynamics of GaAs(110), which represents an example of an open surface with unsaturated dangling bands. The comparison to previously reported and some new He inelastic-scattering data for the low-frequency region provides information on the surface geometry.

引用

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页码：11942 / 11945

页数：4

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