60-GHZ REFLECTION GAIN BASED ON SUPERLATTICE NEGATIVE DIFFERENTIAL CONDUCTANCE

被引：19

作者：

HADJAZI, M

PALMIER, JF

SIBILLE, A

WANG, H

PARIS, E

MOLLOT, F

机构：

[1] France Telecom/CNET/PAB, Laboratoire de Bagneux, 92225 Bagneux cedex, 196 av. H. Rauera

[2] Thomson TCS, 91401 Orsay Cedex, Domaine de Corbeville

[3] CNRS-L2M, 92220 Bagneux

[4] CESDA, DCN, 83800 Toulon Naval

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 08期

关键词：

SUPERLATTICES; PERPENDICULAR TRANSPORT; MICROWAVE OSCILLATORS;

D O I：

10.1049/el:19930434

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The negative differential conductance originating from miniband negative effective mass has been characterised at high frequencies in two GaAs/AlAs superlattice devices. High reflection gains reaching 10 dB at 38 GHz have been observed up to 60 GHz. These results demonstrate the excellent potentialities of superlattices for millimetre-wave oscillator applications.

引用

页码：648 / 649

页数：2

共 6 条

[1] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].