SOLID-PHASE EPITAXIAL-GROWTH OF SI THROUGH A1 FILM

[1] SOLID-PHASE EPITAXIAL-GROWTH OF SI THROUGH PALLADIUM SILICIDE LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2831 - 2836

[2] CSEPREGI L, UNPUBLISHED

[3] HEURLE FM, 1968, T METALL SOC AIME, V242, P502

[4] LIAU ZL, 1975, J ELECTROCHEM SOC, V122, P1697

[5] LARGE-AREA UNIFORM GROWTH OF (100) SI THROUGH AL FILM BY SOLID EPITAXY [J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 125 - 126

[6] SOLID-PHASE EPITAXIAL-GROWTH OF GERMANIUM THROUGH PALLADIUM GERMANIDE LAYERS [J]. THIN SOLID FILMS, 1977, 44 (02) : 193 - 199

[7] Mayer J. W., 1970, ION IMPLANTATION SEM

[8] SOME ASPECTS OF GE EPITAXIAL-GROWTH BY SOLID-SOLUTION [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 627 - 630

[9] ION CHANNELING STUDIES OF CRYSTALLINE PERFECTION OF EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) : 587 - 593

[1] SOLID-PHASE EPITAXIAL-GROWTH OF SI THROUGH PALLADIUM SILICIDE LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2831 - 2836

[2] CSEPREGI L, UNPUBLISHED

[3] HEURLE FM, 1968, T METALL SOC AIME, V242, P502

[4] LIAU ZL, 1975, J ELECTROCHEM SOC, V122, P1697

[5] LARGE-AREA UNIFORM GROWTH OF (100) SI THROUGH AL FILM BY SOLID EPITAXY [J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 125 - 126

[6] SOLID-PHASE EPITAXIAL-GROWTH OF GERMANIUM THROUGH PALLADIUM GERMANIDE LAYERS [J]. THIN SOLID FILMS, 1977, 44 (02) : 193 - 199

[7] Mayer J. W., 1970, ION IMPLANTATION SEM

[8] SOME ASPECTS OF GE EPITAXIAL-GROWTH BY SOLID-SOLUTION [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 627 - 630

[9] ION CHANNELING STUDIES OF CRYSTALLINE PERFECTION OF EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) : 587 - 593