SUPERCONDUCTIVITY AT DISORDERED INTERFACES

被引：64

作者：

SIMANEK, E

机构：

[1] Department of Physics, University of California, Riverside

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 32卷 / 09期

关键词：

D O I：

10.1016/0038-1098(79)90743-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The increase of the superconducting transition temperature Tc due to the tunneling of conduction electrons into negative-U centers at a disordered metal-semiconductor interface is calculated. The strong dependence of the experimental increase of Tc on the Fermi energy of the metal is accounted for by the polaronic reduction of the tunneling matrix elements. The latter reduction is dynamically suppressed by the decreasing lifetime of the localized state as EF increases. The theoretical enhancement is sufficiently strong to explain the increase of Tc observed in eutectic alloys. © 1979.

引用

页码：731 / 733

页数：3

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