PHOTO-VOLTAIC PROPERTIES OF REACTIVELY SPUTTERED A-SIHX FILMS

被引：23

作者：

MOUSTAKAS, TD

WRONSKI, CR

MOREL, DL

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1980年 / 35-6卷 / JAN-期

关键词：

D O I：

10.1016/0022-3093(80)90288-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：719 / 724

页数：6

共 11 条

[1] HYDROGENATION AND THE DENSITY OF DEFECT STATES IN AMORPHOUS SILICON [J].

BRODSKY, MH ;

KAPLAN, D .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :431-435

[2]

Carlson D. E., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P893

[3] EVIDENCE FOR SHARP AND GRADUAL OPTICAL-ABSORPTION EDGES IN AMORPHOUS GERMANIUM - COMMENT [J].

CONNELL, GAN ;

LEWIS, A .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 60 (01) :291-298

[4] USE OF HYDROGENATION IN STRUCTURAL AND ELECTRONIC STUDIES OF GAP STATES IN AMORPHOUS-GERMANIUM [J].

CONNELL, GAN ;

PAWLIK, JR .

PHYSICAL REVIEW B, 1976, 13 (02) :787-804

[5]

DENEUFVILLE JP, 1980, J NON-CRYST, V35

[6]

FRITZSCHE H, 1978, SOLID STATE TECHNOL, V21, P55

[7] DEFECTS IN PLASMA-DEPOSITED A-SI-H [J].

KNIGHTS, JC ;

LUCOVSKY, G ;

NEMANICH, RJ .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :393-403

[8]

MOTT NF, 1971, ELECTRONIC PROCESSES

[9] SPUTTERED HYDROGENATED AMORPHOUS SILICON [J].

MOUSTAKAS, TD .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) :391-435

[10] DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING [J].

PAUL, W ;

LEWIS, AJ ;

CONNELL, GAN ;

MOUSTAKAS, TD .

SOLID STATE COMMUNICATIONS, 1976, 20 (10) :969-972

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