ERBIUM POINT-DEFECTS IN SILICON

被引:91
作者
NEEDELS, M [1 ]
SCHLUTER, M [1 ]
LANNOO, M [1 ]
机构
[1] INST SUPER ELECTR CORD, LILLE, SPAIN
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 23期
关键词
D O I
10.1103/PhysRevB.47.15533
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The possible technological importance of rare-earth-doped semiconductors has led to great interest in these materials. However, little at the atomic level is hitherto known about such defects in the host lattice. Using first-principles calculations, the nature of erbium point defects in crystalline silicon is investigated. The total energy of an erbium point defect at several high-symmetry sites and with two different oxidation states is computed. Among the configurations studied, the minimum-energy one is Er3+ at a tetrahedral interstitial site. The nature of the Er-related defect levels is determined.
引用
收藏
页码:15533 / 15536
页数:4
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